march 2012 fdp100n10 n-chan nel powertrench ? mosfet ?2012 fairchild semiconductor corporation fdp100n10 rev. c1 www.fairchildsemi.com 1 fdp100n10 n-channel powertrench ? mosfet 100v, 75a, 10m features ?r ds(on) = 8.2m ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handing capability ? rohs compliant applications ? dc to dc converters / synchronous rectification description this n-channel mosfet is pr oducedusing fairchild semicon- ductor?s advanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. d g s to-220 fdp series g d s mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 75 o c) 75 a i dm d r a i n c u r r e n t - p u l s e d (note 1) 300 a e as single pulsed avalanche energy (note 2) 365 mj dv/dt peak diode recovery dv/dt (note 3) 6 v/ns p d power dissipation (t c = 25 o c) 208 w - derate above 25 o c1.4w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.72 o c/w r cs thermal resistance, case to sink typ. 0.5 r ja thermal resistance, junction to ambient 62.5
fdp100n10 n-chan nel powertrench ? mosfet fdp100n10 rev. c1 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp100n10 fdp100n10 to-220ab tube n/a 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 100 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 100v, v gs = 0v - - 1 a v ds = 100v, v gs = 0v, t j = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-4.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 8.2 10 m g fs forward transconductance v ds = 10v, i d = 37.5a (note 4) -110-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 5500 7300 pf c oss output capacitance - 530 710 pf c rss reverse transfer capacitance - 220 325 pf q g(tot) total gate charge at 10v v ds = 50v, i d = 75a v gs = 10v (note 4, 5) - 76 100 nc q gs gate to source gate charge - 30 - nc q gd gate to drain ?miller? charge - 20 - nc t d(on) turn-on delay time v dd = 50v, i d = 75a v gs = 10v, r gen = 25 (note 4, 5) - 70 150 ns t r turn-on rise time - 265 540 ns t d(off) turn-off delay time - 125 260 ns t f turn-off fall time - 115 240 ns i s maximum continuous drain to source diode forward current - - 75 a i sm maximum pulsed drain to source diode forward current - - 300 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s (note 4) -71-ns q rr reverse recovery charge - 164 - nc notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 0.13mh, i as = 75a, v dd = 25v, r g = 25 , starting t j = 25 o c 3: i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 o c 4: pulse test: pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature typical characteristics
fdp100n10 n-chan nel powertrench ? mosfet fdp100n10 rev. c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 24681012 1 10 100 1000 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0.1 1 10 100 5 500 i d ,drain current[a] v ds ,drain-source voltage[v] *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 50 100 150 200 250 300 350 0.000 0.005 0.010 0.015 0.020 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 0 2000 4000 6000 8000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 153045607590 0 2 4 6 8 10 *note: i d = 75a v ds = 80v v ds = 50v v ds = 25v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdp100n10 n-chan nel powertrench ? mosfet fdp100n10 rev. c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 20 40 60 80 100 i d , drain current [a] t c , case temperature [ o c ] 0.1 1 10 100 400 0.1 1 10 100 500 100 s 10 ms dc 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r jc = 0.72 o c/w tc = 25 o c 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.72 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdp100n10 n-chan nel powertrench ? mosfet fdp100n10 rev. c1 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp100n10 n-chan nel powertrench ? mosfet fdp100n10 rev. c1 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdp100n10 n-chan nel powertrench ? mosfet fdp100n10 rev. c1 www.fairchildsemi.com 7 mechanical dimensions to-220
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